SiC Surface Rough Finish Polishing Solution
Rough polishing mainly adopts mechanical polishing method, and uses hard abrasives with smaller particle size, such as B4C, diamond, etc., to trim the surface of the wafer.
It is used to remove the residual stress layer and mechanical damage layer in the grinding process, improve the surface flatness and surface quality, complete the material removal efficiently, and lay the foundation for the subsequent ultra-precision polishing.
After the traditional rough polishing process, using fine-grained diamond or B4C polishing liquid to mechanically polish the SiC wafer, the flatness of the wafer surface is greatly improved, but there are many scratches on the machined surface and a deep residual stress layer. and mechanical damage layer.
In order to further improve the surface quality of the wafer, improve the surface roughness and flatness, and make the surface quality characteristic parameters meet the precision requirements in the subsequent processing, ultra-precision polishing is a very critical link in the SiC surface processing process.
With the development of ultra-precision polishing technology, at present, the ultra-precision polishing processing methods suitable for SiC single wafer mainly include mechanical grinding, magnetorheological polishing, ion beam polishing, chemical mechanical polishing, etc. Among them, chemical mechanical polishing (CMP) technology is the current The most efficient method to achieve global planarization of SiC wafers.