SiC Single Wafer Important
At present, more than 95% of the world’s semiconductor components are based on the first-generation semiconductor material silicon as the basic functional material. However, with the rise of new applications such as electric vehicles and 5G, silicon-based semiconductors are limited by the physical properties of silicon materials. The bottleneck is not easy to break through, so the third-generation semiconductor materials represented by gallium nitride (GaN) and silicon carbide (SiC) have begun to receive attention.
Among them, SiC substrate processing technology is an important basis for device fabrication. The quality and precision of its surface processing directly affect the quality of epitaxial films and the performance of devices. Therefore, in its application, the wafer surface is required to be ultra-smooth, free of Defects, no damage, surface roughness value below nanometer level.
However, due to the high hardness, high brittleness, good wear resistance, and extremely stable chemical properties of SiC crystals, the processing of SiC wafers becomes very difficult.
The ultra-precision processing technology of SiC single wafer, according to its processing sequence, mainly goes through the following processes: directional cutting, grinding (rough grinding, fine grinding), polishing (mechanical polishing) and ultra-precision polishing (chemical mechanical polishing).